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7 / 2017-11-08 12:03:03
Quantum Well Laser Diodes With slightly-doped tunnel junction
tunneling,quantum well,broadband,semiconductor laser
Plenary track
Abstract Pending
Huolei Wang / Caltech
Yajie Li / Chinese Academy of Science
Hongyan Yu / Chinese Academy of Science
Xuliang Zhou / Chinese Academy of Science
Weixi Chen / Chinese Academy of Science
Jiaoqing Pan / Chinese Academy of Science
Ying Ding / University of Glasgow
We experimentally investigate the electrical and optical characteristics of conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. The results show that the slightly-doped tunnel junction plays a crucial role in the laser diodes performances in the InGaAs/GaAs quantum well material system. Both the lasers are operating at 1.06 μm, but the slightly-doped tunnel junction diode show nonlinear S-shaped current–voltage and broadband lasing characteristics. The results may also lead to the realization of more applications.
Important Date

  • Conference Date

    Apr 09

    2018

    to

    Apr 11

    2018

  • Oct 15 2017

    Draft paper submission deadline

  • Dec 15 2017

    Draft Paper Acceptance Notification

  • Jan 31 2018

    Final Paper Deadline

  • Apr 11 2018

    Registration deadline

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