IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

202 / 2017-11-16 21:33:05

A High Performance Isolated High Frequency Converter Based on GaN HEMT

High frequency; Isolated converter; Resonant inverter stage

Plenary track > Hard-switched and soft-switched applications

In this paper, an isolated high frequency converter based on GaN HEMT is proposed, which can achieve soft-switching characteristics and low switch voltage stress. In conventional isolated Class converter, there are two inductors and one transformer, and the large number of magnetic components leads to great system loss and large system volume. To solve this problem, the proposed topology makes full use of the parasitic components of transformer, which helps to save one inductor. Thus, the system efficiency and power density can be improved. To achieve soft switching and low voltage stress, the switch impedance is optimized and the detailed design method of the proposed converter is analyzed. In tens of megahertz, the GaN HEMTs are adopted to reduce the driving loss, switching loss and conduction loss. A 20MHz prototype based on the proposed topology is designed in this paper. The experimental results verify the feasibility of the proposed converter and corresponding design method.