IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

219 / 2017-11-21 15:13:12

A 1MHz Gate Driver for Parallel Connected SiC MOSFETs with Protection Circuit

Plenary track > Gate drive and other auxiliary circuits

Design of a 1MHz SiC MOSFET gate driver circuit have been implemented in this paper, which enhances the reliability of parallel-connected
SiC MOSFETs in high frequency applications. Improvements have been made for high-speed overcurrent protection circuit. The fault status can be latched and counted for both overcurrent protection and over-voltage and under-voltage protection of MOSFET gate. In addition, dynamic balancing current sharing structure is proposed for high-speed SiC MOSFET in parallel application. Balanced current sharing can be achieved by means of current feedback and switching delay time compensation. The proposed schemes are verified through experimental results.