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224 / 2017-11-21 21:59:08
Influence of Parasitic Capacitance on Transient Current Distribution in Paralleled SiC MOSFETs
SiC MOSFET,parasitic capacitance,spread,current distribution,parallel connection
Plenary track > Device characterization and modeling
Final Paper
Junji Ke / North China Electric Power University
Huazhen Huang / North China Electric Power University
Peng Sun / North China Electric Power University
James Abuogo / North China Electric Power University
Zhibin Zhao / North China Electric Power University
Xiang Cui / North China Electric Power University
Important Date

  • Conference Date

    May 17

    2018

    to

    May 19

    2018

  • Dec 08 2017

    Abstract Submission Deadline

  • Jan 30 2018

    Abstract Notification of Acceptance

  • Feb 10 2018

    Draft paper submission deadline

  • Feb 10 2018

    Final Paper Deadline

  • May 19 2018

    Registration deadline

Sponsored By
IEEE
Organized By
Xi'an Jiaotong University
Xidian University
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