IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

230 / 2017-11-22 10:04:19

Current Sharing Analysis of Paralleled GaN HEMT Via Feedback Theory

Plenary track > Device characterization and modeling

Several discrete MOSFETs have to be connected in parallel to achieve a higher power application, because currently the commercially available GaN HEMT with highest current capability is only 60 A / 650 V. However, current sharing of paralleled GaN HEMT has been still considered as a big challenge issue. This paper presents current sharing analysis approach of paralleled GaN HEMT via feedback theory， which is a new physical insight. As converter designer, it is important that one try replacing some mathematical findings using physical insight. In this respect, a most valuable tool is feedback theory, which provide a feedback loop to help one to understand and learn the contribution of each key parameters such as on-resistance RDS(on) to current sharing of paralleled GaN HEMT . Therefore, several feedback loops about on-resistance RDS(on), gate threshold voltage (VGS(th)) , trans-conductance ( gm ), the feedback capacitor (Cgd)and parasitic inductances have been developed to analysis the influence of paralleled GaN HEMT on current sharing.