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232 / 2017-11-22 10:21:05
A Gate Driving Circuit Surviving 200℃ for Silicon Carbide MOSFET
gate driving circuit,high temperature
Plenary track > Gate drive and other auxiliary circuits
Final Paper
Miaoxin Jin / Harbin Institute of Technology
Qiang Gao / Harbin Institute of Technology
Important Date

  • Conference Date

    May 17

    2018

    to

    May 19

    2018

  • Dec 08 2017

    Abstract Submission Deadline

  • Jan 30 2018

    Abstract Notification of Acceptance

  • Feb 10 2018

    Draft paper submission deadline

  • Feb 10 2018

    Final Paper Deadline

  • May 19 2018

    Registration deadline

Sponsored By
IEEE
Organized By
Xi'an Jiaotong University
Xidian University
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