IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

268 / 2017-11-30 16:12:58

IGCT Circuit Model Based on Pspice Modeling Platform

IGCT,SiC power MOSFET model,hard-driven,circuit model,Pspice modeling platform

Plenary track > Device characterization and modeling

In this paper, the structural features and operation principle of Integrated Gate Commutated Thyristors (IGCT) are analyzed, a M-2T-3R circuit model of IGCT is built based on Pspice modeling platform, which consist of one MOSFET, two transistors and three resistances, and the MOSFET is SiC power MOSFET model. Then the key model parameters are extracted and the test circuit is established, and the current and voltage waveforms during IGCT switching are simulated. The accuracy of the model is verified by comparing the simulation and the measurement waveforms.