IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

276 / 2017-12-05 20:47:40

Failure Models of SiC MOSFET and SiC JFET

Plenary track > Device characterization and modeling

In this submission, the failure models of two SiC devices, MOSFET and JFET, have been presented. Models are constituted based on conventional sub-circuit models, but leakage current models are incorporated to accurately reproduce the mechanism which leads to the device self-heating. Additionally, the channel current for two models is integrated with advanced mobility models characterized with temperature and electric-field dependent. Two failure models are validated with vigorous TCAD simulation and experimental data. Under same voltage level, the short-circuit robustness of SiC JFET is higher than that of SiC MOSFET.