IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

281 / 2017-12-06 21:37:46

Substrate Termination Technique for Monolithically Integrated Lateral GaN-on-Si Power Devices

GaN-on-Si, Veritcal Leakage, Half-bridge circuit, Dynamic Ron

Plenary track > Device characterization and modeling

In this work, the impact of the floating substrate on the current collapse of the lateral GaN-on-Si devices featuring symmetric vertical leakage has been investigated, which facilitates future evaluation of the dynamic performance of a monolithically integrated half-bridge. The floating substrate can provide enhanced BV, alleviated buffer-related dynamic RON degradation, and can possibly suppress the cross-talk particularly for the devices with symmetric vertical leakage.