IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

283 / 2017-12-07 09:01:53

Design of Gate Driver and Power Device Evaluation Platform for SiC MOSFETS

Gate Driver,protection,gate resistors,double pulse test

Plenary track > Gate drive and other auxiliary circuits

This paper presents an active gate drive circuit that is suitable for high-frequency and high voltage applications for Silicon-Carbide (SiC) power MOSFETs. Compared with the traditional SiC gate driver, the proposed driver circuit focuses on the comprehensive protection functions for SiC, including the short-circuit protection, under/over-voltage lockout, gate-clamping, soft turn-off. Fault report and imformations on the use of gate resistors(RG) to control SiC switching are discussed. Switching loss and futher investigated on the influence of different gate resistors to switching time and switching loss are also provided. Meanwhile, a double pulse test fixture is built to evaluate the power device and the gate dvier. Both the design details and test results are presented.