IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

284 / 2017-12-07 09:13:01

Novel Tiny 1.2kV SiC MOSFET Gate Driver

SiC MOSFET,parasitic inductance,passive protection,tiny gate driver

Plenary track > Gate drive and other auxiliary circuits

Many SiC MOSFET gate drivers have been designed with the truly unnecessary functions which made them become needlessly complex. The purposes of this research are to design and to prototype a 1.2kV SiC MOSFET gate driver which is as compact as possible with only the most necessary components but performs well at the high switching frequency. By focusing only into the MOSFET C2M0080120D and C2M0160120D from Wolfspeed, the tiny gate driver was designed, inspired by the basic components: the optocoupler, a totem-pole gate driver IC, and the passive protection resistors. The traces were also optimized to reduce the parasitic inductances.