IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

291 / 2017-12-07 17:15:53

Characterization and Detailed Analysis of The Crosstalk With SiC MOSFET

maximum gate-source voltage,synchronous SiC MOSFET,reverse blocking recovery stage

Plenary track > SOAs including short-circuit, spike, and transient tolerance

This paper first establishes the equivalent model of the synchronous SiC MOSFET in the double pulse test (DPT) circuit. This paper theoretically analyzes the process of establishing gate-source voltage of the synchronous MOSFET driver circuit, which considers the reverse recovery characteristics of the body diode of the synchronous SiC MOSFET. Based on analysis and simulation verification, the maximum gate-source voltage of synchronous SiC MOSFET happens in reverse blocking recovery stage.