IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

295 / 2017-12-07 21:44:50

GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure

enhancement-mode,FinFET,double-channel

Plenary track > Device characterization and modeling

GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure is proposed. The DC characteristics of device is simulated by sentaurus TCAD software. The simulation results show that the double-channel AlGaN/GaN with doped barriers can improve the channel current. Furthermore, The combination of FinFET and double-channel structure can improve the saturation current and the control ability of the gate, the enhancement-mode device can be obtained with the 30nm Fin-width, and the peak transconductance reaches 417mS/mm.