IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

301 / 2017-12-08 02:03:55

Online Junction Temperature Estimation using Integrated Temperature Sensor for SiC Modules

Plenary track > Device characterization and modeling

Silicon Carbide (SiC) power MOSFETs have the potential to be adopted in high reliability applications such as the automotive and aerospace. The measurement or estimation of its junction temperature is an emerging technology for high performance control, condition monitoring, and lifetime estimation. This paper deals with real-time estimation of the junction temperature using integrated negative thermal coefficient (NTC) thermistor in SiC modules. A simplified thermal model is built to accurately describe the transient impedance between the chip and the integrated NTC, of which parameters can be derived from Finite Element Methods (FEM) simulation. Then the junction temperature of the module is online estimated based on the obtained thermal model and NTC sensor measurement. The effectiveness of the proposed method is verified by experimental results. This concept can be applied to power electronics converters.