IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

310 / 2017-12-08 11:39:23

High Efficiency Quasi Class-J GaN PA with 1.8-3.0GHz Bandwidth

Class J PA,GaN transistor,transmission line,impedance matching,wideband

Plenary track > Packaging, power modules, and ICs

Abstract—We present a design and implementation of a broadband high efficiency GaN Power amplifier (PA). The PA is based on Class-J continuous operation principle which using a short-circuited quarter-wavelength transmission line to bias the real part of the second harmonic impedance to be zero. And then, the optimum output fundamental impedance are matched by load-pull method with no need of internal parasitic parameters of the power transistor. The designed PA is work in a quasi Class-J mode which has high efficiency. After that, a wideband low-pass network of transmission lines is applied for output matching network in order to increase bandwidth. Simulation result show that the PA achieves output power of 39-41.5dBm in 1.8-3.0GHz with 60%-75% drain efficiency.