IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

314 / 2017-12-08 14:26:30

A 2.6GHz Class-AB GaN Power Amplifier with Maximum Output Power of 56W Achieving 70% Power Added Efficiency

Plenary track > Packaging, power modules, and ICs

A 2.6GHz class-AB power amplifier (PA) based on GaN transistor is presented. The PA achieves nearly 200MHz bandwidth while maintaining optimal performance. All matching networks are realized by cascade trapezoidal transmission lines, which are designed by an equivalent series strip line model. A paralleled RC tank is placed at the beginning of input and a resistor is placed at the bias path to adjust the stability of PA, which make PA keep stable at the specified frequency range. Results show that the designed PA achieves a maximum 19dB power gain and 56W maximum output power with 70% power added efficiency (PAE).