IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

317 / 2017-12-08 15:23:59

The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter

GaN,converter,isolated

Plenary track > Applications in renewable energy and storage, transportation, industrial drives, and grid power

This paper presents the driving challenges in paralleling of GaN devices in an isolated dc-dc converter. The design rules for gate driver and PCB layout are concluded based on the quantitative analysis of parasitics. The hardware prototype of an 300W flyback forward isolated converter with extensive paralleling of GaN devices is implemented and presented in this paper.