IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

326 / 2017-12-08 20:58:02

Driving a Silicon Carbide Power MOSFET with a fast Short Circuit Protection

Sillion Carbide, MOSFET, Driver, Gate voltage, Deadtime, Short circuit protection.

Plenary track > Gate drive and other auxiliary circuits

Silicon Carbide device has the excellent characteristics comparing to normal silicon device, especial for its fast switching behavior to reduce dynamic losses, and becoming popular in kinds of application, such as EV charger and PV inverter. In the meanwhile, a great chanllenge becomes more and more strict demands on its driver while applying into hundreds kHz application. In the paper, several key parameters of SiC MOSFET driver circuit will be discussed, such as gate voltage, deadtime, isolation and common mode transient immunity(CMTI) capability. It is also very important to detect the short ciruit rapidly as SiC Mosfet are very sensitive to surge thermal energy as much smaller chip size inside, and necessary to slow down turn off di/dt for acceptable voltage spike during short circuit.