IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

327 / 2017-12-08 20:59:04

Research of high-power converter based on the wide bandgap power semiconductor devices for rail transit electrical drive

Plenary track > Applications in renewable energy and storage, transportation, industrial drives, and grid power

Due to the material limitations, the traditional silicon-based power devices approach the intrinsic limits of the material in many ways. The silicon-based devices have not been applicable to high voltage, high frequency, high temperature, high efficiency and high power density applications. Due to the wide bandgap semiconductor devices having unmatched electrical performance of the silicon-based devices, it can significantly reduce the weight of the inverter, volume, cost, and enhance efficiency and power density power electronic devices, which can withstand higher value, faster switching speeds, lower switching losses and higher operating junction temperature. The subject of high efficiency, high power density in the rail transit electrical drive demand as the background, the key technology research of high-power converter based on the wide bandgap power semiconductor devices is proposed. First, the wide bandgap power devices heat loss model is given, and the converter system mechanical, electrical, thermal field circuit coupled multi-physics simulation integration platform is established. On this basis, the impact based on the high switching frequency stray parameters of the wide bandgap power device high power converter with the peak voltage, peak current, loss and efficiency of the system is studied. Related research will provide a solid foundation in the development of the wide band gap power devices and the high-voltage large-capacity device applications.