IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

329 / 2017-12-08 21:28:14

Gate Control Optimization of Si/SiC Hybrid Switch Within Wide Power Rating Range

SiC MOSFET,Hybrid switch,gate control

Plenary track > Gate drive and other auxiliary circuits

Theoretical and experimental study are carried out to investigate the impact of the gate signal’s delay time on the cost-effective hybrid switch’s thermal performance in a DC/DC boost converter in the wide power rating range. The weighted average junction temperature method for the optimal turn-on and turn-off gate signal’s delay time of the auxiliary SiC MOSFET is proposed to keep the junction temperature of both devices within the specified temperature range or prevent one of them from overheating in the hybrid switch at the wide power range. It based on the junction temperature of the two devices in the hybrid switch varies with their gate signal’s delay time and the power rating. The performance of Si/SiC hybrid switch with the optimum gate control pattern based on the weighted average junction temperature method is experimentally demonstrated and analyzed.