IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

335 / 2017-12-08 23:02:56

A SiC MOSFET based High-voltage Series-connected Devices

Plenary track > Packaging, power modules, and ICs

This paper proposes an innovative 3.6kV device topology, based on three 1200V SiC MOSFETs in series, while only needs one standard gate driver and some auxiliary components. In addition, this circuit can lower the positive driver voltage drops on turn-on interval, which can reduce the conducting losses. It also lowers the turn-on losses by recycling the energy of balancing capacitor to gate terminal. Furthermore, it removes the avalanch mode zener diodes and avoids operating at avalanch mode to improve efficiency, comparing to the conventional JFET superCascode. Furthermore, It also achieves higher reliability than hybird FREEDM superCascode with normally off MOSFETs.