IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

337 / 2017-12-08 23:32:27

Obtaining the Exact Electrical Parameters of Ohmic Contacts using a Novel Electrode Pairs (EPs) Design Method

Plenary track > Device characterization and modeling

This paper proposes a novel method to obtain the exact electrical parameters of metal/semiconductor Ohmic contact, with focus on the specific contact resistance and the effective electrode width for IC design. The deduction process in extracting the contact parameters has been modelled, analysed by TCAD simulations, and verified by experimental data. The sheet resistance variance between the layer underneath the contact and the region outside the contact can be obtained exactly by the proposed model. The work provides a distinct perspective to understand and quantify the electrical characteristics of the metal/semiconductor Ohmic contact, and it can also assist engineers for a better electrode layout design.