IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

339 / 2017-12-08 23:42:21

General Modeling and Loss Prediction of SiC Power Module

Plenary track > Device characterization and modeling

This paper focus on the static and dynamic modeling of SiC MOSFET power module and its loss prediction. Firstly, a general static model of SiC MOSFET is proposed to accurately reproduce devices transfer and output characteristics under different temperature. By applying more degrees of freedom in the channel current expression, removing the drift resistance and rectifying temperature dependent parameters, the proposed static model achieve higher precision and better convergence simultaneously. Then, an analytical dynamic model is proposed,, which involves the nonlinearity junction capacitance and dynamic transconductance of the device as well as the stray parameters of laminated busbar and modul packaging. Great fitness are seen between the simulation results and experiment results. Finally, based on the verified static and dynamic model, prediction of device total loss and junction temperature in double active bridge (DAB) prototype is presented and the comparisons to Si IGBT module are also given.