IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

351 / 2017-12-09 05:24:44

Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise

GaN,Substrate,Power Transistor,common mode current,switching converter,high frequency

Plenary track > Common-mode and EMI management

Fast switching of GaN device would increase power converter common mode noise level. In this paper, it is proposed to connect substrate of the upper device in a half-bridge leg to its drain terminal in order to decrease capacitive coupling between device switching node and ground plane so as to decrease common mode current Icm level. Device static and dynamic characteristics are compared when changing its substrate connection. Icm magnitude is decreased 2dB in the measurement when connecting upper device substrate to drain terminal than conventional substrate to source connection when power converter switches at 200V and 100kHz.