IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

355 / 2017-12-09 09:17:01

On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

GaN-on-Si,Static perfromance,High Temperature,Silicon

Plenary track > Device characterization and modeling

This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at high temperatures. High temperature experiments were performed to analyse the static performance and reliability of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN Gate Injected Transistor (GIT), the Transphorm TPH3206LD and TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Si S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The high temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si devices indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.