IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

364 / 2018-01-26 21:48:55

Temperature Dependence of 1.2 kV 4H-SiC Power MOSFET Body Diode over Temperature Range of 90K to 603K

silicon carbide (SiC); MOSFET body diode; reverse recovery characteristics; temperature dependence.

Plenary track > Device characterization and modeling

As the expansion of the application field, the temperature characteristics of power electronic devices is put forward more stringent requirements, such as in aeronautics and superconducting, etc. [1-3]. In this paper, the switching performance of 1.2kV MOSFET body diode is characterized at cryogenic and high temperatures. The temperature dependence on reverse recovery-related characteristics of body diode is measured and analyzed, including device forward voltage (Vf), reverse recovery charge (Qrr) and maximum reverse recovery current (Irm). The reverse recovery-related energy loss (Err) is quantified over a wide temperature range of 90K to 603K, especially at turn-off transient.