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362 / 2019-02-24 16:15:28
A High Speed High Voltage Normally-off SiC Vertical JFET Power Device
SiC, JFET, specific on-resistance, high speed
Plenary track > Compound Semiconductor Devices
Final Paper
Moufu Kong / University of Electronic Science and Technology of China
Yunru Hou / University of Electronic Science and Technology of China
Bo Yi / University of Electronic Science and Technology of China
Xingbi Chen / University of Electronic Science and Technology of China
A high speed 3350V normally-off SiC vertical junction field-effect transistor (VJFET) power device is proposed in this paper. The gate-drain Miller capacitance of the proposed VJFET is greatly reduced in comparison with that of the conventional trenched-and-implanted JFET(TI-JFET), which results in a less than 25ns extremely fast turning-off speed. Meantime, the proposed SiC VJFET also has a low specific on-resistance with a value of 11.8mΩ∙cm2 when VGS is 2.6V.
Important Date

  • Conference Date

    Jun 12

    2019

    to

    Jun 14

    2019

  • Jun 12 2019

    Draft paper submission deadline

  • Jun 14 2019

    Registration deadline

Organized By
Xi'an University of Technology
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