The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

367 / 2019-01-12 14:27:38

Comparison of single and double channel AlGaN/GaN HEMTs and MOSHEMTs

Current collapse (CC),HEMT,MOSHEMT,2DEG (Two Dimentional Electron Gas)

Plenary track > Compound Semiconductor Devices

In this paper, a comparative study of AlGaN/GaN high electron mobility transistors (HEMTs) with and metal oxide semiconductor HEMT (MOS-HEMT) has been carried out for both single channel and double channel devices. This paper shows that in double channel devices, lack of gate control is observed specifically for lower channel. Unilateral power gain, transconductance and gate – source capacitance is highest for single channel HEMT (SC-HEMT) whereas current gain, maximum frequency and cut-off frequency is higher for single channel MOS-HEMT (SC-MOSHEMT) device. Therefore, single channel devices are good for high power radio frequency applications and double channel devices are well and good to improve the breakdown voltage of the device.