The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

390 / 2019-01-30 23:06:35

Influence of Gate Connection Modes on Trade-offs in Trench Gate U-shaped Channel SOI-LIGBT

Silicon-on-insulator (SOI), SOI-LIGBT, U-shaped, dv/dt controllability, trade-off

Plenary track > Power Electronics

The influence of gate connection modes in the trench gate U-shaped (TGU) SOI-LIGBTs are investigated in this paper. The TGU SOI-LIGBT features a U-shaped gate trench (G1) and a U-shaped hole barrier trench (G2). In conventional gate connection mode, G2 and G1 are shorted and controlled by the gate signal synchronously. This mode results in a poor dv/dt (di/dt) controllability during the device turn-on. An excellent dv/dt (di/dt)-EON trade-off without affecting the EOFF-VON trade-off can be achieved through applying a novel gate connection mode with pre-charged G2.