The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

401 / 2019-02-25 12:44:53

A Novel Enhancement-Mode AlGaN/GaN HFET with Double-Barrier Gates-Separating Groove

AlGaN/GaN; HFET; enhancement mode; subthreshold slope; breakdown voltage

Plenary track > Compound Semiconductor Devices

In this paper, a novel enhancement-mode AlGaN/GaN double-barrier gates-separating groove heterostructure field-effect transistor (DB-GSG HFET) is proposed, in which two block barriers exist among the three gates as realized by dry etching. Because of the shielding effect of drain-side block barrier on drain voltage, the source-side block barrier is almost unaffected by drain voltage in the DB-GSG HFET. As a result, the electrical characteristics of the DB-GSG HFET are improved obviously, compared with the gates-separating groove (GSG) HFET which has only one single block barrier between double gates.