The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

402 / 2019-02-01 23:48:33

Impact of Depletion in Substrate on Turn-off Characteristic of Superjunction SOI-LIGBT

Silicon-on-insulator (SOI),IGBT,lateral IGBT,LIGBT,SOI-LIGBT,superjunction,turn-off,substrate depletion effect

Plenary track > Power Electronics

The impact of depletion in substrate on turn-off characteristic of superjunction (SJ) silicon-on-insulator lateral gate bipolar transistor is investigated in this paper. It is found that the depletion in substrate could lead to an increase of turn-off loss. The depletion layer expands deeply in P-type substrate (P-sub) with low doping concentration, which modulates the electric potential distribution and slows down the carrier extraction in SJ pillars. The reduced turn-off loss can be obtained by adopting a high-doped P-sub.