Abstract Details
404 / 2019-02-04 13:06:00
Performance Enhanced a-Si:H TFTs for 8K Display by Adopting Corrosion Barrier Layer
A-Si:H thin film transistors (TFTs); contact resistance (RC); TLM
Final Paper
A novel method of reducing the contact resistance (RC) is presented by adding a corrosion barrier layer between n+ a-Si and source/drain electrodes. The performance of novel TFTs is greatly improved by 35% and RC are effectively decreased from 17.43 Ω·m to 2.97 Ω·m.
Important Date
-
Conference Date
Jun 12
2019
toJun 14
2019
-
Jun 12 2019
Draft paper submission deadline
-
Jun 14 2019
Registration deadline
Organized By
Xi'an University of Technology
Contact Information
- Dr. Zhaonian Yang
- ed******@126.com
- 177********
Previous Conferences
-
2025-06-06 China Yinchuan
2025 IEEE International Conference on Electron Devices and Solid-State Circuits -
2017-10-18 Taiwan, China
2017 International Conference on Electron Devices and Solid-State Circuits -
2016-08-03 Hong Kong, China Hongkong，China
2016 IEEE International Conference on Electron Devices and Solid-State Circuits -
2015-06-01 Singapore
2015 IEEE International Conference on Electron Devices and Solid-State Circuits
