The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

424 / 2019-02-26 18:14:01

Simultaneous Fabrication of 4H-SiC BJT and UMOSFET on Same Wafer

4H-SiC,BJT,UMOSFET,simultaneous fabrication,device characteristic

Plenary track > Power Electronics

For the first time, two types of 4H-SiC switching devices，including power bipolar junction transistors (BJT) and U-shaped Metal-Oxide-Semiconductor field effect transistors (UMOSFET), are simultaneously fabricated with compatible process on the same wafer. The Gummel performance for BJT and transfer performance for UMOSFET are measured and discussed, respectively, and also the output and blocking characteristics are presented. It is believed that the approach presented in this letter is very helpful for the development of 4H-SiC power integration as well as the future 4H-SiC BiCMOS technology.