Abstract Details
442 / 2019-02-27 12:07:46
A Gain & Bandwidth Reprogrammable Neural Recording Amplifier with Leakage Reduction Switches
neural recording amplifier, reprogrammable arrays, leakage reduction, high off-resistance switch
Final Paper
The off-resistance non-ideal effect of MOSFET switches in reprogrammable neural recording amplifiers has been analyzed in this paper. Then a novel leakage reduction switch structure for feedback impedance arrays is proposed to extended low frequency bandwidth. As a case study, a low-noise, wide gain and bandwidth reconfigurable neural recording amplifier has been designed and simulated in a 0.18μm CMOS process. Simulated characteristics of the amplifier include tunable gain of 20~40dB, programmable low-cutoff frequency of 0.025~125Hz, high-cutoff frequency of 1~125 kHz, respectively. The input referred noise is 6.75μVrms (0.5~11.4kHz, 40dB) and the power consumption is 8.1μW.
Important Date
-
Conference Date
Jun 12
2019
toJun 14
2019
-
Jun 12 2019
Draft paper submission deadline
-
Jun 14 2019
Registration deadline
Organized By
Xi'an University of Technology
Contact Information
- Dr. Zhaonian Yang
- ed******@126.com
- 177********
Previous Conferences
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2025-06-06 China Yinchuan
2025 IEEE International Conference on Electron Devices and Solid-State Circuits -
2017-10-18 Taiwan, China
2017 International Conference on Electron Devices and Solid-State Circuits -
2016-08-03 Hong Kong, China Hongkong，China
2016 IEEE International Conference on Electron Devices and Solid-State Circuits -
2015-06-01 Singapore
2015 IEEE International Conference on Electron Devices and Solid-State Circuits
