The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

454 / 2019-02-27 17:14:50

High Performance AlGaN/GaN HEMTs by Supercritical Fluid

AlGaN/GaN HEMTs,supercritical fluid treatment,defects fix

Plenary track > Power Electronics

Heteroepitaxy is a technology that crystalline film grows on a crystalline substrate or film of a different material. Due to lattice mismatching, the defects caused by heteroepitaxy always exist. In this paper, epitaxy growth of normally-on AlGaN/GaN HEMTs with improved drain current by the supercritical fluid treatment is reported with investigations on its physical mechanism. The supercritical fluid treatment was applied to fix defects caused by heteroepitaxy. The optimized AlGaN/GaN HEMTs demonstrated a high drain current with increased from 4.93mA/mm to 54.8mA/mm.