The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

457 / 2019-02-27 19:36:20

RF Performance of Hydrogenated Single Crystal Diamond MOSFETs

diamond, MOSFETs, output power density, frequency

Plenary track > RF & Microwave

Hydrogenated diamond MOSFETs with gate length of 350 nm are fabricated by a self-aligned process on (001)-oriented single crystal diamond substrate. The H-diamond MOSFETs show maximum drain current density of 233 mA/mm at VGS = -4 V, and transconductance of 62 mS/mm. The maximum output power density reaches 815 mW/mm at 2 GHz continuous wave, which is the highest reported value for diamond transistors measured at 2 GHz.