The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

467 / 2019-02-27 21:29:58

Two-Dimensional Analytical Model of AlGaN/GaN HEMTs with a Etched AlGaN Barrier Layer

AlGaN/GaN HEMTs, analytical model, electric field modulation

Plenary track > Modeling and Simulation Technology

Take complete depletion as example, a two-dimensional analytical model of AlGaN/GaN high-electron-mobility transistors (HEMTs) with a etched AlGaN barrier layer is developed in this paper. The off-state channel potential and electric field distributions are achieved on the basis of Poisson’s equation. The analytical model is verified in comparison with the ISE TCAD simulation results, and a fair consistency indicates the validity of the proposed analytical model.