The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

469 / 2019-02-27 21:43:47

Study of a phenomenon of high error WL in mixed read and program operations in 3-D NAND flash

TLC NAND flash,96 word-line (WL),RBER,open edge WL

Plenary track > Memory Devices and Technology

This work reported a high Raw Bit Error Rate (RBER) phenomenon of 3-D NAND flash. In the mixed read and program operation, we found that when the block was not fully programmed, and the edge word-line leads to high RBER. We have presented an extensive experimental study for the conditions of this phenomenon. At the same time, we analyzed the threshold voltage offset when this phenomenon occurs. This study provides useful guidance for the access of 96-layer 3-D NAND Flash.