The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

472 / 2019-02-27 21:58:37

A Novel High-k LDMOS with Triangular Trench Field Plate

triangular trench field plate, breakdown voltage, specific on-resistance, High-k

Plenary track > Power Electronics

This paper presents a High-k Lateral Diffused Metal Oxide Semiconductor (HK-LDMOS) with triangular trench field plate (TTFP-HK-LDMOS). The main feature of TTFP-HK-LDMOS is introducing two triangular trench field plate at both ends of the drift region. The distribution of surface electric field can be modulated by the triangular trench field plate, so that the breakdown voltage can be improved. The simulation results show that the breakdown voltage of TTFP-HK-LDMOS can reach 372V. Compare with HK-LDMOS breakdown voltage, TTFP-HK-LDMOS breakdown voltage increases 28.3%. Meanwhile, the TTFP-HK-LDMOS improved figure of merits which is 2.2 times in compared with HK-LDMOS.