The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

479 / 2019-02-27 23:59:39

Modeling and Simulation the Effect of Electron Irradiation on the Reverse Recovery of Double-Epitaxy SJ-VDMOS

superjunction MOSFET,reverse recovery time,electron irradiation,capture section,trap energy level

Plenary track > Modeling and Simulation Technology

In this paper, the effect of irradiation-induced defects on the reverse recovery (RR) characteristics of the double-epitaxy SJ-MOSFET is investigated and modelled for the first time. Combinating theoretical modeling with numerical simulation, it is found that the first epitaxial layer thickness (W1) and the characteristic parameters of trap energy level both have a great influence on the RR. In addition, simulation results indicate other electrical characteristics of the device such as breakdown voltage and leakage current are also affected by them. Finally, we provide irradiation technology engineers with an effectual proposal to achieve a good compromise between RR and other electrical characteristics by choosing the appropriate W1, the trap energy level, and the size of carrier capture section.