The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

493 / 2019-02-28 16:05:28

a-Si:H TFT Gate Driver for Touch Sensing with Decreased Stress Time

thin-film transistor,gate driver,touch panel,reliability

Plenary track > Display and Imager

A new a-Si:H integrated gate driver is presented for in-cell touch sensing panel with the time division mode. Only 1 TFT and 1 capacitor are added for the input module of the touch-sensing gate driver stage. While a compact 5 TFT 1 capacitor schematic is used for the non touch-sensing gate driver stage. Then the clock signals for the gate driver can be continuous for the complete touch/display period, which benefits simplification of the external clock generation circuits. The proposed gate driver features free of long positive gate-to-source stress for all the TFTs, which is critical for extending the circuit lifetime.