Abstract Details
528 / 2019-03-08 21:32:31
Modeling of a new structure of IGBT module
New structure of IGBT module;Modeling;Parasitic parameters;Thermal resistance
Draft Rejected
Abstract—Based on the new structure of IGBT module of an internal integrated shunt designed by the team, it is optimized, modeled and simulated, the parasitic parameters are reduced, and the thermal resistance value of the module is calculated, and a general new structure model of IGBT module is obtained by experimental verification.
Important Date
-
Conference Date
Jun 12
2019
toJun 14
2019
-
Jun 12 2019
Draft paper submission deadline
-
Jun 14 2019
Registration deadline
Organized By
Xi'an University of Technology
Contact Information
- Dr. Zhaonian Yang
- ed******@126.com
- 177********
Previous Conferences
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2025-06-06 China Yinchuan
2025 IEEE International Conference on Electron Devices and Solid-State Circuits -
2017-10-18 Taiwan, China
2017 International Conference on Electron Devices and Solid-State Circuits -
2016-08-03 Hong Kong, China Hongkong，China
2016 IEEE International Conference on Electron Devices and Solid-State Circuits -
2015-06-01 Singapore
2015 IEEE International Conference on Electron Devices and Solid-State Circuits
