The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

534 / 2019-03-11 11:53:37

Ultra-high voltage 4H-SiC Thyristor with inhomogeneous carrier lifetime

4H-SiC, ultra-high voltage, thyristor, lifetime

Plenary track > Power Electronics

Ultra-high voltage 4H-SiC thyristor with inhomogeneous carrier lifetime has been investigated by two-dimensional numerical simulation. The effects of inhomogeneous minority carrier lifetime in narrow n-base, wide blocking p-base and both on the forward characteristics of 4H-SiC thyristor are simulated. Results indicate that, compared to the 4H-SiC thyristor with homogeneous carrier lifetime, the forward breakdown voltage in 4H-SiC thyristor with inhomogeneous carrier lifetime has changed little, however, its forward voltage drop has distinctly increased by 32% appoximately.