Abstract Details
551 / 2019-03-14 19:26:47
Investigation on the Modeling of 3300 V SiC MOSFET
3300 V SiC MOSFET, Advanced Design System, Modeling, Double Pulse Test
Final Paper
This paper studies the modeling of the self-developed 3300 V / 5 A SiC MOSFET. After extracting
parameters from output characteristics and capacitance characteristics by Advanced Design System (ADS), an accurate model is established. With this model, the simulation results are in good agreement with the experimental data. Furthermore, a series of double pulse tests are carried out to
verify the accuracy of the model, laying solid foundation for further application.
parameters from output characteristics and capacitance characteristics by Advanced Design System (ADS), an accurate model is established. With this model, the simulation results are in good agreement with the experimental data. Furthermore, a series of double pulse tests are carried out to
verify the accuracy of the model, laying solid foundation for further application.
Important Date
-
Conference Date
Jun 12
2019
toJun 14
2019
-
Jun 12 2019
Draft paper submission deadline
-
Jun 14 2019
Registration deadline
Organized By
Xi'an University of Technology
Contact Information
- Dr. Zhaonian Yang
- ed******@126.com
- 177********
Previous Conferences
-
2025-06-06 China Yinchuan
2025 IEEE International Conference on Electron Devices and Solid-State Circuits -
2017-10-18 Taiwan, China
2017 International Conference on Electron Devices and Solid-State Circuits -
2016-08-03 Hong Kong, China Hongkong，China
2016 IEEE International Conference on Electron Devices and Solid-State Circuits -
2015-06-01 Singapore
2015 IEEE International Conference on Electron Devices and Solid-State Circuits
