The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

564 / 2019-03-14 23:23:23

Effects of Annealing Temperature on the Properties of ZnO Thin Films and Ultraviolet Photodetectors

ZnO thin film,,MSM,,Ultraviolet detector,,Annealing temperatures

Plenary track > Optoelectronic Materials and Devices

ZnO thin films were deposited by RF magnetron sputtering on glass substrates, and the Au-ZnO-Au ultraviolet photodetectors were fabricated. The effects of annealing temperature on the properties of ZnO thin films and ultraviolet photodetectors were investigated, systematically. The results show that ZnO film has a c-axis preferred orientation, the resistivity and carrier concentration of thin film can be effecttively improved from changing annealing temeprarue. The average transmittance of ZnO is above 85 % in the visible range and the strong absorption of ultraviolet light can be observed. After annealing at 500 oC, the dark current and photocurrent of photodetectors can reach 1.5 µA and 3.6 mA at 10 V bias respectively.