The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

566 / 2019-03-14 23:54:13

Preparation and Photoelectric Properties of p-Cu2O/n-ZnO Thin Film Heterojunction

RF magnetron sputtering,ZnO thin films,Cu2O thin films,thin film heterojunction

Plenary track > Optoelectronic Materials and Devices

P-Cu2O/n-ZnO thin film heterojunction was fabricated onto ITO glass substrate by radio frequency magnetron sputtering. Meanwhile, the characteristics of p-Cu2O/n-ZnO thin film heterojunction were studied systematically. The results show that ZnO thin films have the c-axis preferred orientation, and Cu2O thin films have the preferred orientation along the (110). The optical band gap energies of ZnO and Cu2O thin films are 3.3 eV and 2.8 eV, respectively. The carrier concentrations of Cu2O and ZnO thin films are 6.41×1015 cm-3 and 1.4×1018 cm-3, the values of resistivity are 6.41 Ω•cm and 1.4 Ω•cm, respectively. Furthermore, the results demonstrated that the absorption intensity of the Cu2O/ZnO thin film heterojunction is significantly enhanced in visible region compared with the ZnO thin films. The forward current of the heterojunction increases obviously under illumination.