The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

577 / 2019-03-15 12:33:42

Read-Decoupled Radiation Hardened RD-DICE SRAM Cell for Low-Power Space Applications

SRAM,radiations,memory,digital circuits,DICE,read-decouple SRAM

Plenary track > Digital Circuits

Conventional 6T Static Random Access Memory(
SRAM) cell suffers from data flip (Single event upset) due
to continuous bombardment of radiation particles in the space
environment. To mitigate single-event upset (SEU) which arises
due to radiation, radiation-hardened SRAM cell such as dual
interlocked storage cell (DICE) is proposed in the literature.
However, DICE SRAM uses 4 bit-lines for the read and write
operations, and which consume significantly high power when
compared with the conventional 6T SRAM cell with 2 bit-lines. To
resolve this issue, we propose a read-decoupled DICE SRAM cell,
which uses only single bit-line for a read operation. Simulations
results obtained from Spice for 1 KB SRAM array implemented
in UMC 65nm technology node show that by simply decoupling
read and write operation in DICE SRAM, read energy(write
energy) and read delay(write delay) reduce by at least 72 %(17%)
and 67%(37%) respectively. SEU results obtained from Cogenda
tool show that the read-decoupled DICE is immune to radiations
as is DICE.