The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

581 / 2019-03-15 14:49:22

University of Electronic Science and Technology of China-luxiaofei@ime.ac.cn-Poster-Not published before

Silicon Carbide, Current Spreading Layer, Insulated Gate Bipolar Transistor，Switching Characteristic

Plenary track > Power Electronics

A ultrahigh voltage p-channel 4H-SiC (Silicon Carbide) IGBT (Insulated Gate Bipolar Transistor) with CSL (Current Spreading Layer) structure is designed and optimized. The static and dynamic characteristics of the IGBT is improved by adjusting the CSL doping concentration NCSL, the CSL thickness DCSL and the width of JFET region LJFET. Through numerical simulations, when NCSL is 1×1016cm−3, DCSL is 1.5μm and LJFET is 3μm, the blocking voltage can reach 15.6kV, and the gate oxide field EOX is less than the critical electric field 3MV/cm. When the on-state current is 10A, the on-state voltage is only 8.2V. The turn-on time is about 120ns and the turn-off time is about 440ns at 5kV dc-link voltage.