The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

589 / 2019-03-15 17:56:02

Design and fabrication of charge-balanced SGRSO MOSFET

Trench, SGRSO, charge-balanced, Specific on-resistance

Plenary track > Power Electronics

The simulation research and process development of Split-Gate Resurf Stepped Oxide (SGRSO) MOSFET are introduced in this paper. The devices are simulated with different epitaxial resistivity, P-body structures, gate structure and gate oxide thickness, etc. The electric field distribution of the device is optimized, and the longitudinal electric field is approximately trapezoidal. A MOSFET with breakdown voltage of 75V, threshold voltage of 1.8V, quality factor FOM of 5.94mΩ.nC is obtained. The SGRSO MOSFET is fabricated based on the Integrated Circuit Pilot Process Platform of IMECAS，and packaged with SMD-0.5. The breakdown voltage BVDSS is 76V, and the specific on-resistance Rdson is 0.39mΩ/mm2, while the planar gate device of the same voltage level is 2.36 mΩ/mm2