Abstract Details
594 / 2019-03-15 19:28:07
Comparative study of bipolar Resistive Switching and complementary switching behavior of Cu-doped resistive devices
complementary resistive switching (CRS),hybrid conductive filament,Nanocrystal
Final Paper
Resistive random access memory (RRAM) is a promising candidate for next-generation nonvolatile memory applications. To further understanding the mechanism of the resistive switching behavior is essential. Here, a comparative study of bipolar Resistive Switching and complementary switching behavior was implemented based on the Cu-doped resistive devices. Excellent bipolar resistive switching behavior has been achieved by introducing the NCs into the HfOx oxide. Meanwhile, a highly stable nature of CRS was achieved in W-I device.
Important Date
-
Conference Date
Jun 12
2019
toJun 14
2019
-
Jun 12 2019
Draft paper submission deadline
-
Jun 14 2019
Registration deadline
Organized By
Xi'an University of Technology
Contact Information
- Dr. Zhaonian Yang
- ed******@126.com
- 177********
Previous Conferences
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2025-06-06 China Yinchuan
2025 IEEE International Conference on Electron Devices and Solid-State Circuits -
2017-10-18 Taiwan, China
2017 International Conference on Electron Devices and Solid-State Circuits -
2016-08-03 Hong Kong, China Hongkong，China
2016 IEEE International Conference on Electron Devices and Solid-State Circuits -
2015-06-01 Singapore
2015 IEEE International Conference on Electron Devices and Solid-State Circuits
